tidy3d.HurkxDirectBandToBandTunneling#
- class HurkxDirectBandToBandTunneling[source]#
Bases:
Tidy3dBaseModelThis class defines a direct band-to-band tunneling recombination model based on the Hurkx model as described in [1].
- Parameters:
attrs (dict = {}) – Dictionary storing arbitrary metadata for a Tidy3D object. This dictionary can be freely used by the user for storing data without affecting the operation of Tidy3D as it is not used internally. Note that, unlike regular Tidy3D fields,
attrsare mutable. For example, the following is allowed for setting anattrobj.attrs['foo'] = bar. Also note that Tidy3D will raise aTypeErrorifattrscontain objects that can not be serialized. One can check ifattrsare serializable by callingobj.json().A (PositiveFloat = 400000000000000.0) – [units = 1/(cm^3 s)]. Parameter \(A\) in the direct BTBT Hurkx model.
B (float = 1900000.0) – [units = V/cm]. Parameter \(B\) in the direct BTBT Hurkx model.
E_0 (PositiveFloat = 1) – [units = V/cm]. Reference electric field \(E_0\) in the direct BTBT Hurkx model.
sigma (float = 2.5) – Exponent \(\sigma\) in the direct BTBT Hurkx model. For direct semiconductors \(\sigma\) is typically 2.0, while for indirect semiconductors \(\sigma\) is typically 2.5.
Notes
The direct band-to-band tunneling recombination rate \(R^{\text{BTBT}}\) is primarily defined by the material’s bandgap energy \(E_g\) and the electric field \(F\).
Default values are provided for silicon.
\[R^{\text{BTBT}} = A \cdot \frac{n \cdot p - n_i^2}{(n + n_i) \cdot (p + n_i)} \cdot \left( \frac{|\mathbf{E}|}{E_0} \right)^{\sigma} \cdot \exp \left(-\frac{B}{|\mathbf{E}|} \cdot \left( \frac{E_g}{E_{g, 300}} \right)^{3/2} \right)\]where \(A\), \(B\), \(E_0\), and \(\sigma\) are material-dependent parameters.
Example
>>> import tidy3d as td >>> default_Si = td.HurkxDirectBandToBandTunneling( ... A=1e19, ... B=1.9e6, ... E_0=1, ... sigma=2.5 ... )
References
Attributes
Methods
Inherited Common Usage
- A#
- B#
- E_0#
- sigma#
- __hash__()#
Hash method.