Charge Mediums

Charge Mediums#

The electrical behaviour assigned to a structure’s medium.charge. Conductors and insulators set contacts and dielectric regions; the semiconductor medium carries the doping, mobility, recombination and band models that the drift-diffusion solver uses.

`ChargeConductorMedium`	Conductor medium for conduction simulations.
`ChargeInsulatorMedium`	Insulating medium.
`SemiconductorMedium`	This class is used to define semiconductors.

Mobility#

Carrier mobility models assigned to SemiconductorMedium.mobility_n and mobility_p.

`ConstantMobilityModel`	Constant mobility model
`CaugheyThomasMobility`	The Caughey-Thomas temperature-dependent carrier mobility model.
`MasettiMobility`	The Masetti doping-dependent low-field carrier mobility model.

Note

MasettiMobility is supported only on the accelerated solver.

Generation Recombination#

Carrier generation and recombination models contributing to the drift-diffusion source terms.

`AugerRecombination`	Parameters for the Auger recombination model.
`RadiativeRecombination`	Defines the parameters for the radiative recombination model.
`ShockleyReedHallRecombination`	Defines the parameters for the Shockley-Reed-Hall (SRH) recombination model.
`FossumCarrierLifetime`	Doping- and temperature-dependent SRH carrier lifetime.
`PalankovskiQuayApproxCarrierLifetime`	Doping- and temperature-dependent SRH carrier lifetime, Palankovski–Quay empirical (Scharfetter-style) approximation.
`DistributedGeneration`	Class that allows to add a distributed generation model.
`HurkxDirectBandToBandTunneling`	This class defines a direct band-to-band tunneling recombination model based on the Hurkx model.
`SelberherrImpactIonization`	This class defines the parameters for the Selberherr impact ionization model.

Note

At most one ShockleyReedHallRecombination model may be specified per medium; if several are provided only the last one is used.

Doping#

Spatial dopant distributions applied to a semiconductor medium.

`ConstantDoping`	Sets constant doping \(N\) in the specified box with a `size` and `concentration`.
`GaussianDoping`	Sets a gaussian doping in the specified box.
`CustomDoping`	Sets a custom doping profile in the specified box.

Bandgap#

Bandgap-narrowing models for heavily doped semiconductors.

SlotboomBandGapNarrowing

Parameters for the Slotboom model for band-gap narrowing.

Effective Density Of States (DOS)#

Effective density-of-states models for the conduction and valence bands.

`ConstantEffectiveDOS`	Constant effective density of states model.
`IsotropicEffectiveDOS`	Effective density of states model that assumes single valley and isotropic effective mass.
`MultiValleyEffectiveDOS`	Effective density of states model that assumes multiple equivalent valleys and anisotropic effective mass.
`DualValleyEffectiveDOS`	Effective density of states model that assumes combination of light holes and heavy holes with isotropic effective masses.

Energy Bandgap#

Temperature dependence of the semiconductor energy bandgap.

`ConstantEnergyBandGap`	Constant Energy band gap
`VarshniEnergyBandGap`	Models the temperature dependence of the energy band gap (Eg) using the Varshni formula.

Charge Carrier Properties#

Models describing how the optical properties of a medium change with the local carrier concentration.

`LinearChargePerturbation`	Specifies parameter's perturbation due to free carrier effects as a linear function of electron and hole densities:
`CustomChargePerturbation`	Specifies parameter's perturbation due to free carrier effects as a custom function of electron and hole densities defined as a two-dimensional array of perturbation values at sample electron and hole density points.