tidy3d.MultiValleyEffectiveDOS

tidy3d.MultiValleyEffectiveDOS#

class MultiValleyEffectiveDOS[source]#

Bases: EffectiveDOS

Effective density of states model that assumes multiple equivalent valleys and anisotropic effective mass. The model assumes the standard equation for the 3D semiconductor with parabolic energy dispersion:

Parameters:

  • m_eff_long (PositiveFloat) – Relative effective mass of the carriers in the longitudinal direction. This is a relative value compared to the electron mass at rest.

  • m_eff_trans (PositiveFloat) – Relative effective mass of the carriers in the transverse direction. This is a relative value compared to the electron mass at rest.

  • N_valley (PositiveFloat) – Number of effective valleys

Notes

\[N_{\text{eff}} = 2 N_{\text{valley}} \left( m_{\text{eff,long}} m_{\text{eff,trans}}^2 \right)^{1/2} \left( \frac{m_e k_B T}{2 \pi \hbar^2} \right)^{3/2}\]

Attributes

m_eff_long

m_eff_trans

N_valley

Methods

calc_eff_dos(T)

Abstract method to calculate the effective density of states.
m_eff_long#
m_eff_trans#
N_valley#
calc_eff_dos(T)[source]#

Abstract method to calculate the effective density of states.