tidy3d.DualValleyEffectiveDOS

class DualValleyEffectiveDOS

Bases: EffectiveDOS

Effective density of states model that assumes combination of light holes and heavy holes with isotropic effective masses. The model assumes the standard equation for the 3D semiconductor with parabolic energy dispersion:

Parameters:

• m_eff_lh (PositiveFloat) – Relative effective mass of the light holes. This is a relative value compared to the electron mass at rest.

• m_eff_hh (PositiveFloat) – Relative effective mass of the heavy holes. This is a relative value compared to the electron mass at rest.

Notes

\[N_{eff} = 2 \left( \frac{m_{\text{eff, lh}} m_e k_B T}{2 \pi \hbar^2} \right)^{3/2} + 2 \left( \frac{m_{\text{eff, hh}} m_e k_B T}{2 \pi \hbar^2} \right)^{3/2}\]

Attributes

m_eff_lh
m_eff_hh

Methods

calc_eff_dos(T)

Abstract method to calculate the effective density of states.

m_eff_lh

m_eff_hh

calc_eff_dos(T)

Abstract method to calculate the effective density of states.