Charge Mediums#
Conductor medium for conduction simulations. |
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Insulating medium. |
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This class is used to define semiconductors. |
Mobility#
Constant mobility model |
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The Caughey-Thomas temperature-dependent carrier mobility model. |
Generation Recombination#
Parameters for the Auger recombination model. |
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Defines the parameters for the radiative recombination model. |
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Defines the parameters for the Shockley-Reed-Hall (SRH) recombination model. |
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Parameters for the Fossum carrier lifetime model |
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Class that allows to add a distributed generation model. |
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This class defines a direct band-to-band tunneling recombination model based on the Hurkx model as described in [1]. |
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This class defines the parameters for the Selberherr impact ionization model. |
Doping#
Sets constant doping \(N\) in the specified box with a |
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Sets a gaussian doping in the specified box. |
Bandgap#
Parameters for the Slotboom model for band-gap narrowing. |
Effective Density Of States (DOS)#
Constant effective density of states model. |
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Effective density of states model that assumes single valley and isotropic effective mass. |
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Effective density of states model that assumes multiple equivalent valleys and anisotropic effective mass. |
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Effective density of states model that assumes combination of light holes and heavy holes with isotropic effective masses. |
Energy Bandgap#
Constant Energy band gap |
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Models the temperature dependence of the energy band gap (Eg) using the Varshni formula. |
Charge Carrier Properties#
Specifies parameter's perturbation due to free carrier effects as a linear function of electron and hole densities: |
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Specifies parameter's perturbation due to free carrier effects as a custom function of electron and hole densities defined as a two-dimensional array of perturbation values at sample electron and hole density points. |